| Part Number | BC856B/DG/B3235 | BC856B/DG/B2235 |
|---|---|---|
| Manufacturer | NXP USA Inc. | NXP USA Inc. |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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| Product Status | Active | Active |
| Transistor Type | PNP | - |
| Current - Collector (Ic) (Max) | 100 mA | - |
| Voltage - Collector Emitter Breakdown (Max) | 65 V | - |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA | - |
| Current - Collector Cutoff (Max) | 15nA (ICBO) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 125 @ 2mA, 5V | - |
| Power - Max | 250 mW | - |
| Frequency - Transition | 100MHz | - |
| Operating Temperature | 150°C (TJ) | - |
| Mounting Type | Surface Mount | - |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | - |
| Supplier Device Package | TO-236AB | - |