BC848ALT1G vs BC848AWT1G

Product Attributes

Part Number BC848ALT1G BC848AWT1G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
BC848ALT1G BC848AWT1G
Product Status Active Active
Transistor Type NPN -
Current - Collector (Ic) (Max) 100 mA -
Voltage - Collector Emitter Breakdown (Max) 30 V -
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA -
Current - Collector Cutoff (Max) 15nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA, 5V -
Power - Max 300 mW -
Frequency - Transition 100MHz -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) -