| Part Number | BC847QASZ | BC847QASX |
|---|---|---|
| Manufacturer | Nexperia USA Inc. | NXP USA Inc. |
| Category | Transistors - Bipolar (BJT) - Arrays | Transistors - Bipolar (BJT) - Arrays |
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| Product Status | Active | Active |
| Transistor Type | 2 NPN (Dual) | NPN, PNP Complementary |
| Current - Collector (Ic) (Max) | 100mA | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 45V | 45V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 100mA | 100mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V | 200 @ 2mA, 5V |
| Power - Max | 350mW | 230mW |
| Frequency - Transition | 100MHz | 100MHz |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | 6-XFDFN Exposed Pad | 6-XFDFN Exposed Pad |
| Supplier Device Package | DFN1010B-6 | DFN1010B-6 |