BC847C/DG/B3215 vs BC847C/DG/B2215

Product Attributes

Part Number BC847C/DG/B3215 BC847C/DG/B2215
Manufacturer NXP USA Inc. NXP USA Inc.
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
BC847C/DG/B3215 BC847C/DG/B2215
Product Status Active Active
Transistor Type NPN -
Current - Collector (Ic) (Max) 100 mA -
Voltage - Collector Emitter Breakdown (Max) 45 V -
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA -
Current - Collector Cutoff (Max) 15nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V -
Power - Max 250 mW -
Frequency - Transition 100MHz -
Operating Temperature 150°C (TJ) -
Mounting Type Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package TO-236AB -