BC807-40E6327 vs BC80740E6327

Product Attributes

Part Number BC807-40E6327 BC80740E6327
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
BC807-40E6327 BC80740E6327
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V 250 @ 100mA, 1V
Power - Max 330 mW 330 mW
Frequency - Transition 200MHz 200MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23-3-11 PG-SOT23-3-11