| Part Number | BC640,116 | BC640,112 |
|---|---|---|
| Manufacturer | NXP USA Inc. | NXP USA Inc. |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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| Product Status | Obsolete | Obsolete |
| Transistor Type | PNP | PNP |
| Current - Collector (Ic) (Max) | 1 A | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V | 80 V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA, 2V | 63 @ 150mA, 2V |
| Power - Max | 830 mW | 830 mW |
| Frequency - Transition | 145MHz | 145MHz |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92-3 | TO-92-3 |