| Part Number | BC618,112 | BC638,112 |
|---|---|---|
| Manufacturer | NXP USA Inc. | NXP USA Inc. |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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| Product Status | Obsolete | Obsolete |
| Transistor Type | NPN - Darlington | PNP |
| Current - Collector (Ic) (Max) | 500 mA | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 55 V | 60 V |
| Vce Saturation (Max) @ Ib, Ic | 1.1V @ 200µA, 200mA | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50µA | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 200mA, 5V | 63 @ 150mA, 2V |
| Power - Max | 625 mW | 830 mW |
| Frequency - Transition | 155MHz | 100MHz |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92-3 | TO-92-3 |