BC516_J35Z vs BC546_J35Z

Product Attributes

Part Number BC516_J35Z BC546_J35Z
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
BC516_J35Z BC546_J35Z
Product Status Obsolete Obsolete
Transistor Type PNP - Darlington NPN
Current - Collector (Ic) (Max) 1 A 100 mA
Voltage - Collector Emitter Breakdown (Max) 30 V 65 V
Vce Saturation (Max) @ Ib, Ic 1V @ 100µA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 30000 @ 20mA, 2V 110 @ 2mA, 5V
Power - Max 625 mW 500 mW
Frequency - Transition 200MHz 300MHz
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3 TO-92-3