BC368,112 vs BC369,112

Product Attributes

Part Number BC368,112 BC369,112
Manufacturer NXP USA Inc. NXP USA Inc.
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
BC368,112 BC369,112
Product Status Obsolete Obsolete
Transistor Type NPN PNP
Current - Collector (Ic) (Max) 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 20 V 20 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A 500mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 85 @ 500mA, 1V 85 @ 500mA, 1V
Power - Max 830 mW 830 mW
Frequency - Transition 170MHz 140MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3 TO-92-3