BC338_J35Z vs BC368_J35Z

Product Attributes

Part Number BC338_J35Z BC368_J35Z
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
BC338_J35Z BC368_J35Z
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 800 mA 2 A
Voltage - Collector Emitter Breakdown (Max) 25 V 20 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 500mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100nA 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V 85 @ 500mA, 1V
Power - Max 625 mW 625 mW
Frequency - Transition 100MHz 45MHz
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3 TO-92-3