ATP113-TL-H vs ATP613-TL-H

Product Attributes

Part Number ATP113-TL-H ATP613-TL-H
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
ATP113-TL-H ATP613-TL-H
Product Status Active Obsolete
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 500 V
Current - Continuous Drain (Id) @ 25°C 35A (Ta) 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 10V
Rds On (Max) @ Id, Vgs 29.5mOhm @ 18A, 10V 2Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V 13.8 nC @ 10 V
Vgs (Max) ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 20 V 350 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 50W (Tc) 70W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package ATPAK ATPAK
Package / Case ATPAK (2 leads+tab) ATPAK (2 leads+tab)