ATP216-TL-H vs ATP218-TL-H

Product Attributes

Part Number ATP216-TL-H ATP218-TL-H
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
ATP216-TL-H ATP218-TL-H
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 30 V
Current - Continuous Drain (Id) @ 25°C 35A (Ta) 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 23mOhm @ 18A, 4.5V 3.8mOhm @ 50A, 4.5V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 4.5 V 70 nC @ 4.5 V
Vgs (Max) ±10V ±10V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 20 V 6600 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 40W (Tc) 60W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package ATPAK ATPAK
Package / Case ATPAK (2 leads+tab) ATPAK (2 leads+tab)