APT50GS60BRDQ2G vs APT30GS60BRDQ2G

Product Attributes

Part Number APT50GS60BRDQ2G APT30GS60BRDQ2G
Manufacturer Microchip Technology Microchip Technology
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
APT50GS60BRDQ2G APT30GS60BRDQ2G
Product Status Active Active
IGBT Type NPT NPT
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 93 A 54 A
Current - Collector Pulsed (Icm) 195 A 113 A
Vce(on) (Max) @ Vge, Ic 3.15V @ 15V, 50A 3.15V @ 15V, 30A
Power - Max 415 W 250 W
Switching Energy 755µJ (off) 570µJ (off)
Input Type Standard Standard
Gate Charge 235 nC 145 nC
Td (on/off) @ 25°C 16ns/225ns 16ns/360ns
Test Condition 400V, 40A, 4.7Ohm, 15V 400V, 30A, 9.1Ohm, 15V
Reverse Recovery Time (trr) 25 ns 25 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247 [B] TO-247 [B]