APT20GN60BDQ2G vs APT50GN60BDQ2G

Product Attributes

Part Number APT20GN60BDQ2G APT50GN60BDQ2G
Manufacturer Microchip Technology Microchip Technology
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
APT20GN60BDQ2G APT50GN60BDQ2G
Product Status Active Active
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 40 A 107 A
Current - Collector Pulsed (Icm) 60 A 150 A
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 20A 1.85V @ 15V, 50A
Power - Max 136 W 366 W
Switching Energy 230µJ (on), 580µJ (off) 1185µJ (on), 1565µJ (off)
Input Type Standard Standard
Gate Charge 120 nC 325 nC
Td (on/off) @ 25°C 9ns/140ns 20ns/230ns
Test Condition 400V, 20A, 4.3Ohm, 15V 400V, 50A, 4.3Ohm, 15V
Reverse Recovery Time (trr) 30 ns -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247 [B]