APT40GP60B2DQ2G vs APT50GP60B2DQ2G

Product Attributes

Part Number APT40GP60B2DQ2G APT50GP60B2DQ2G
Manufacturer Microchip Technology Microchip Technology
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
APT40GP60B2DQ2G APT50GP60B2DQ2G
Product Status Active Active
IGBT Type PT PT
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 100 A 150 A
Current - Collector Pulsed (Icm) 160 A 190 A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 40A 2.7V @ 15V, 50A
Power - Max 543 W 625 W
Switching Energy 385µJ (on), 350µJ (off) 465µJ (on), 635µJ (off)
Input Type Standard Standard
Gate Charge 135 nC 165 nC
Td (on/off) @ 25°C 20ns/64ns 19ns/85ns
Test Condition 400V, 40A, 5Ohm, 15V 400V, 50A, 4.3Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 Variant TO-247-3 Variant
Supplier Device Package - -