APT37M100B2 vs APT31M100B2

Product Attributes

Part Number APT37M100B2 APT31M100B2
Manufacturer Microchip Technology Microchip Technology
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
APT37M100B2 APT31M100B2
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 37A (Tc) 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 330mOhm @ 18A, 10V 380mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 305 nC @ 10 V 260 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 9835 pF @ 25 V 8500 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1135W (Tc) 1040W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package T-MAX™ [B2] T-MAX™ [B2]
Package / Case TO-247-3 Variant TO-247-3 Variant