APT35SM70B vs APT35SM70S

Product Attributes

Part Number APT35SM70B APT35SM70S
Manufacturer Microsemi Corporation Microsemi Corporation
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
APT35SM70B APT35SM70S
Product Status Obsolete Obsolete
FET Type N-Channel -
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 700 V 700 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc) 35A
Drive Voltage (Max Rds On, Min Rds On) 20V -
Rds On (Max) @ Id, Vgs 145mOhm @ 10A, 20V -
Vgs(th) (Max) @ Id 2.5V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 20 V -
Vgs (Max) +25V, -10V -
Input Capacitance (Ciss) (Max) @ Vds 1035 pF @ 700 V -
FET Feature - -
Power Dissipation (Max) 176W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3