APT35GP120B2D2G vs APT35GP120B2DQ2G

Product Attributes

Part Number APT35GP120B2D2G APT35GP120B2DQ2G
Manufacturer Microchip Technology Microchip Technology
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
APT35GP120B2D2G APT35GP120B2DQ2G
Product Status Active Active
IGBT Type PT PT
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V
Current - Collector (Ic) (Max) 96 A 96 A
Current - Collector Pulsed (Icm) 140 A 140 A
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 35A 3.9V @ 15V, 35A
Power - Max 540 W 543 W
Switching Energy 1mJ (on), 1.185mJ (off) 750µJ (on), 680µJ (off)
Input Type Standard Standard
Gate Charge 150 nC 150 nC
Td (on/off) @ 25°C 14ns, 99ns 16ns/95ns
Test Condition 800V, 35A, 5Ohm, 15V 600V, 35A, 4.3Ohm, 15V
Reverse Recovery Time (trr) 85 ns -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 Variant TO-247-3 Variant
Supplier Device Package T-MAX™ [B2] -