APT30GS60BRDLG vs APT50GS60BRDLG

Product Attributes

Part Number APT30GS60BRDLG APT50GS60BRDLG
Manufacturer Microsemi Corporation Microsemi Corporation
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
APT30GS60BRDLG APT50GS60BRDLG
Product Status Active Active
IGBT Type NPT NPT
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 54 A 93 A
Current - Collector Pulsed (Icm) 113 A 195 A
Vce(on) (Max) @ Vge, Ic 3.15V @ 15V, 30A 3.15V @ 15V, 50A
Power - Max 250 W 415 W
Switching Energy 570µJ (off) 755µJ (off)
Input Type Standard Standard
Gate Charge 145 nC 235 nC
Td (on/off) @ 25°C 16ns/360ns 16ns/225ns
Test Condition 400V, 30A, 9.1Ohm, 15V 400V, 50A, 4.7Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247 TO-247