APT27ZTR-G1 vs APT27HZTR-G1

Product Attributes

Part Number APT27ZTR-G1 APT27HZTR-G1
Manufacturer Diodes Incorporated Diodes Incorporated
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
APT27ZTR-G1 APT27HZTR-G1
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 800 mA 800 mA
Voltage - Collector Emitter Breakdown (Max) 450 V 450 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 40mA, 200mA 500mV @ 40mA, 200mA
Current - Collector Cutoff (Max) 10µA 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 100mA, 10V 6 @ 300mA, 10V
Power - Max 800 mW 800 mW
Frequency - Transition - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92 TO-92