APT11N80BC3G vs APT11N80KC3G

Product Attributes

Part Number APT11N80BC3G APT11N80KC3G
Manufacturer Microchip Technology Microsemi Corporation
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
APT11N80BC3G APT11N80KC3G
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 7.1A, 10V 450mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 680µA 3.9V @ 680µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 60 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1585 pF @ 25 V 1585 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 156W (Tc) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247 [B] TO-220 [K]
Package / Case TO-247-3 TO-220-3