AIKW40N65DH5XKSA1 vs AIKW40N65DF5XKSA1

Product Attributes

Part Number AIKW40N65DH5XKSA1 AIKW40N65DF5XKSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
AIKW40N65DH5XKSA1 AIKW40N65DF5XKSA1
Product Status Active Active
IGBT Type Trench Trench
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 74 A 74 A
Current - Collector Pulsed (Icm) 120 A 120 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 40A 2.1V @ 15V, 40A
Power - Max 250 W 250 W
Switching Energy 350µJ (on), 100µJ (off) 350µJ (on), 100µJ (off)
Input Type Standard Standard
Gate Charge 95 nC 95 nC
Td (on/off) @ 25°C 19ns/165ns 19ns/165ns
Test Condition 400V, 20A, 15Ohm, 15V 400V, 20A, 15Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package PG-TO247-3-41 PG-TO247-3-41