AIKB30N65DF5ATMA1 vs AIKB50N65DF5ATMA1

Product Attributes

Part Number AIKB30N65DF5ATMA1 AIKB50N65DF5ATMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
AIKB30N65DF5ATMA1 AIKB50N65DF5ATMA1
Product Status Active Active
IGBT Type Trench Field Stop NPT
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 55 A 50 A
Current - Collector Pulsed (Icm) 90 A -
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 30A -
Power - Max 188 W -
Switching Energy 330µJ (on), 100µJ (off) -
Input Type Standard Standard
Gate Charge 70 nC -
Td (on/off) @ 25°C 25ns/188ns -
Test Condition 400V, 15A, 23Ohm, 15V -
Reverse Recovery Time (trr) 67 ns -
Operating Temperature -40°C ~ 175°C (TJ) -
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-3 PG-TO263-3-2