AFGY100T65SPD vs AFGY120T65SPD

Product Attributes

Part Number AFGY100T65SPD AFGY120T65SPD
Manufacturer onsemi onsemi
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
AFGY100T65SPD AFGY120T65SPD
Product Status Active Active
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 120 A 160 A
Current - Collector Pulsed (Icm) 300 A 360 A
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 100A 2.05V @ 15V, 120A
Power - Max 660 W 714 W
Switching Energy 5.1mJ (on), 2.7mJ (off) 6.6mJ (on), 3.8mJ (off)
Input Type Standard Standard
Gate Charge 109 nC 125 nC
Td (on/off) @ 25°C 36ns/78ns 40ns/80ns
Test Condition 400V, 100A, 5Ohm, 15V 400V, 120A, 5Ohm, 15V
Reverse Recovery Time (trr) 105 ns 107 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3