AFGHL50T65SQDC vs AFGHL50T65SQD

Product Attributes

Part Number AFGHL50T65SQDC AFGHL50T65SQD
Manufacturer onsemi onsemi
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
AFGHL50T65SQDC AFGHL50T65SQD
Product Status Active Active
IGBT Type Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 100 A 80 A
Current - Collector Pulsed (Icm) 200 A 200 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A 2.1V @ 15V, 50A
Power - Max 238 W 268 W
Switching Energy 131µJ (on), 96µJ (off) 950µJ (on), 460µJ (off)
Input Type Standard Standard
Gate Charge 94 nC 102 nC
Td (on/off) @ 25°C 17.6ns/94.4ns 20ns/81ns
Test Condition 400V, 12.5A, 4.7Ohm, 15V 400V, 50A, 4.7Ohm, 15V
Reverse Recovery Time (trr) - -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3