AFGB40T65SQDN vs AFGB30T65SQDN

Product Attributes

Part Number AFGB40T65SQDN AFGB30T65SQDN
Manufacturer onsemi onsemi
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
AFGB40T65SQDN AFGB30T65SQDN
Product Status Active Active
IGBT Type - -
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V
Current - Collector (Ic) (Max) 80 A 60 A
Current - Collector Pulsed (Icm) 160 A 120 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 40A 2.1V @ 15V, 30A
Power - Max 238 W 220 W
Switching Energy 858µJ (on), 229µJ (off) -
Input Type Standard Standard
Gate Charge 76 nC 56 nC
Td (on/off) @ 25°C 17.6ns/75.2ns 14.5ns/63.2ns
Test Condition 400V, 40A, 6Ohm, 15V 400V, 30A, 6Ohm, 15V
Reverse Recovery Time (trr) 131 ns 245 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D²PAK-3 (TO-263-3) D²PAK-3 (TO-263-3)