2SK4124-1E vs 2SK4125-1E

Product Attributes

Part Number 2SK4124-1E 2SK4125-1E
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
2SK4124-1E 2SK4125-1E
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta) 17A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 430mOhm @ 8A, 10V 610mOhm @ 7A, 10V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 46.6 nC @ 10 V 46 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 30 V 1200 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta), 170W (Tc) 2.5W (Ta), 170W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-3P-3L TO-3P-3L
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3