2SK2529-E vs 2SK2729-E

Product Attributes

Part Number 2SK2529-E 2SK2729-E
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
2SK2529-E 2SK2729-E
Product Status Active Active
FET Type - N-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 500 V
Current - Continuous Drain (Id) @ 25°C - 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs - 290mOhm @ 10A, 10V
Vgs(th) (Max) @ Id - 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - 55 nC @ 10 V
Vgs (Max) - ±30V
Input Capacitance (Ciss) (Max) @ Vds - 3300 pF @ 10 V
FET Feature - -
Power Dissipation (Max) - 150W (Ta)
Operating Temperature - 150°C
Mounting Type - Through Hole
Supplier Device Package - TO-3P
Package / Case - TO-3P-3, SC-65-3