2SJ687-ZK-E2-AY vs 2SJ687-ZK-E1-AY

Product Attributes

Part Number 2SJ687-ZK-E2-AY 2SJ687-ZK-E1-AY
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
2SJ687-ZK-E2-AY 2SJ687-ZK-E1-AY
Product Status Active Active
FET Type - P-Channel
Technology - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 20 V
Current - Continuous Drain (Id) @ 25°C - 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 2.5V, 4.5V
Rds On (Max) @ Id, Vgs - 7mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs - 57 nC @ 4.5 V
Vgs (Max) - ±12V
Input Capacitance (Ciss) (Max) @ Vds - 4400 pF @ 10 V
FET Feature - -
Power Dissipation (Max) - 1W (Ta), 36W (Tc)
Operating Temperature - 150°C (TJ)
Mounting Type - Surface Mount
Supplier Device Package - TO-252 (MP-3ZK)
Package / Case - TO-252-3, DPak (2 Leads + Tab), SC-63