2SJ661-DL-E vs 2SJ665-DL-E

Product Attributes

Part Number 2SJ661-DL-E 2SJ665-DL-E
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
2SJ661-DL-E 2SJ665-DL-E
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 100 V
Current - Continuous Drain (Id) @ 25°C 38A (Ta) 27A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 4V, 10V
Rds On (Max) @ Id, Vgs 39mOhm @ 19A, 10V 77mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 2.6V @ 1mA 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V 74 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4360 pF @ 20 V 4200 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 1.65W (Ta), 65W (Tc) 1.65W (Ta), 65W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SMP-FD SMP-FD
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB