2SJ655 vs 2SJ656

Product Attributes

Part Number 2SJ655 2SJ656
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
2SJ655 2SJ656
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta) 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 4V, 10V
Rds On (Max) @ Id, Vgs 136mOhm @ 6A, 10V 75.5mOhm @ 9A, 10V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V 74 nC @ 10 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds 2090 pF @ 20 V 4200 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 2W (Ta), 25W (Tc) 2W (Ta), 30W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220ML TO-220ML
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack