2SD2018 vs 2SD2012

Product Attributes

Part Number 2SD2018 2SD2012
Manufacturer Panasonic Electronic Components STMicroelectronics
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
2SD2018 2SD2012
Product Status Obsolete Obsolete
Transistor Type NPN - Darlington NPN
Current - Collector (Ic) (Max) 1 A 3 A
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 1.8V @ 1mA, 1A 1V @ 200mA, 2A
Current - Collector Cutoff (Max) 1µA (ICBO) 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 6500 @ 1A, 10V 100 @ 500mA, 5V
Power - Max 5 W 25 W
Frequency - Transition - 3MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-220-3 Full Pack
Supplier Device Package TO-126B-A1 TO-220F