2SD2014 vs 2SD2012

Product Attributes

Part Number 2SD2014 2SD2012
Manufacturer Sanken STMicroelectronics
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
2SD2014 2SD2012
Product Status Active Obsolete
Transistor Type NPN - Darlington NPN
Current - Collector (Ic) (Max) 4 A 3 A
Voltage - Collector Emitter Breakdown (Max) 80 V 60 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 3mA, 3A 1V @ 200mA, 2A
Current - Collector Cutoff (Max) 10µA (ICBO) 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 3A, 2V 100 @ 500mA, 5V
Power - Max 25 W 25 W
Frequency - Transition 75MHz 3MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack
Supplier Device Package TO-220F TO-220F