2SD1801S-E vs 2SD1801T-E

Product Attributes

Part Number 2SD1801S-E 2SD1801T-E
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
2SD1801S-E 2SD1801T-E
Product Status Obsolete Obsolete
Transistor Type NPN -
Current - Collector (Ic) (Max) 2 A -
Voltage - Collector Emitter Breakdown (Max) 50 V -
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 1A -
Current - Collector Cutoff (Max) 100nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 100mA, 2V -
Power - Max 800 mW -
Frequency - Transition 150MHz -
Operating Temperature 150°C (TJ) -
Mounting Type Through Hole -
Package / Case TO-251-3 Short Leads, IPak, TO-251AA -
Supplier Device Package TP -