2SD1620-TD-E vs 2SD1627-TD-E

Product Attributes

Part Number 2SD1620-TD-E 2SD1627-TD-E
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
2SD1620-TD-E 2SD1627-TD-E
Product Status Active Active
Transistor Type NPN -
Current - Collector (Ic) (Max) 3 A -
Voltage - Collector Emitter Breakdown (Max) 10 V -
Vce Saturation (Max) @ Ib, Ic 400mV @ 60mA, 3A -
Current - Collector Cutoff (Max) 100nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 3A, 2V -
Power - Max 500 mW -
Frequency - Transition 200MHz -
Operating Temperature 150°C (TJ) -
Mounting Type Surface Mount -
Package / Case TO-243AA -
Supplier Device Package PCP -