2SD1620-TD-E vs 2SD1626-TD-E

Product Attributes

Part Number 2SD1620-TD-E 2SD1626-TD-E
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
2SD1620-TD-E 2SD1626-TD-E
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 3 A 1.5 A
Voltage - Collector Emitter Breakdown (Max) 10 V 50 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 60mA, 3A 1.5V @ 500µA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 3A, 2V 4000 @ 500mA, 2V
Power - Max 500 mW 500 mW
Frequency - Transition 200MHz 120MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA
Supplier Device Package PCP PCP