2SD1060R-1EX vs 2SD1060S-1EX

Product Attributes

Part Number 2SD1060R-1EX 2SD1060S-1EX
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
2SD1060R-1EX 2SD1060S-1EX
Product Status Not For New Designs Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 5 A 5 A
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 300mA, 3A 300mV @ 300mA, 3A
Current - Collector Cutoff (Max) 100µA (ICBO) 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A, 2V 140 @ 1A, 2V
Power - Max 1.75 W 1.75 W
Frequency - Transition 30MHz 30MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Supplier Device Package TO-220-3 TO-220-3