2SD1012F-SPA vs 2SD1012G-SPA

Product Attributes

Part Number 2SD1012F-SPA 2SD1012G-SPA
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
2SD1012F-SPA 2SD1012G-SPA
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 700 mA 700 mA
Voltage - Collector Emitter Breakdown (Max) 15 V 15 V
Vce Saturation (Max) @ Ib, Ic 80mV @ 10mA, 100mA 80mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 1µA (ICBO) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 50mA, 2V 280 @ 50mA, 2V
Power - Max 250 mW 250 mW
Frequency - Transition 250MHz 250MHz
Operating Temperature 125°C (TJ) 125°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case 3-SIP 3-SIP
Supplier Device Package 3-SPA 3-SPA