2SC5706-E vs 2SC5706-H

Product Attributes

Part Number 2SC5706-E 2SC5706-H
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
2SC5706-E 2SC5706-H
Product Status Active Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 5 A 5 A
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V
Vce Saturation (Max) @ Ib, Ic 240mV @ 100mA, 2A 240mV @ 100mA, 2A
Current - Collector Cutoff (Max) 1µA (ICBO) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA, 2V 200 @ 500mA, 2V
Power - Max 800 mW 800 mW
Frequency - Transition 400MHz 400MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package TP TP