2SC5566-TD-E vs 2SC5569-TD-E

Product Attributes

Part Number 2SC5566-TD-E 2SC5569-TD-E
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
2SC5566-TD-E 2SC5569-TD-E
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 4 A 7 A
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V
Vce Saturation (Max) @ Ib, Ic 225mV @ 100mA, 2A 240mV @ 175mA, 3.5A
Current - Collector Cutoff (Max) 1µA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA, 2V 200 @ 500mA, 2V
Power - Max 1.3 W 1.3 W
Frequency - Transition 400MHz 330MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA
Supplier Device Package PCP SOT-89/PCP-1