2SC5551AF-TD-E vs 2SC5551AE-TD-E

Product Attributes

Part Number 2SC5551AF-TD-E 2SC5551AE-TD-E
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
2SC5551AF-TD-E 2SC5551AE-TD-E
Product Status Active Active
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 30V 30V
Frequency - Transition 3.5GHz 3.5GHz
Noise Figure (dB Typ @ f) - -
Gain - -
Power - Max 1.3W 1.3W
DC Current Gain (hFE) (Min) @ Ic, Vce 135 @ 50mA, 5V 90 @ 50mA, 5V
Current - Collector (Ic) (Max) 300mA 300mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA
Supplier Device Package PCP PCP