2SC5415AF-TD-E vs 2SC5415AE-TD-E

Product Attributes

Part Number 2SC5415AF-TD-E 2SC5415AE-TD-E
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
2SC5415AF-TD-E 2SC5415AE-TD-E
Product Status Active Active
Transistor Type - NPN
Voltage - Collector Emitter Breakdown (Max) - 12V
Frequency - Transition - 6.7GHz
Noise Figure (dB Typ @ f) - 1.1dB @ 1GHz
Gain - 9dB
Power - Max - 800mW
DC Current Gain (hFE) (Min) @ Ic, Vce - 90 @ 30mA, 5V
Current - Collector (Ic) (Max) - 100mA
Operating Temperature - 150°C (TJ)
Mounting Type - Surface Mount
Package / Case - TO-243AA
Supplier Device Package - PCP