2SC3649S-TD-E vs 2SC3647S-TD-E

Product Attributes

Part Number 2SC3649S-TD-E 2SC3647S-TD-E
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
2SC3649S-TD-E 2SC3647S-TD-E
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 1.5 A 2 A
Voltage - Collector Emitter Breakdown (Max) 160 V 100 V
Vce Saturation (Max) @ Ib, Ic 450mV @ 50mA, 500mA 400mV @ 100mA, 1A
Current - Collector Cutoff (Max) 1µA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 5V 100 @ 100mA, 5V
Power - Max 500 mW 500 mW
Frequency - Transition 120MHz 120MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA
Supplier Device Package PCP PCP