2SC3646S-P-TD-E vs 2SC3646T-P-TD-E

Product Attributes

Part Number 2SC3646S-P-TD-E 2SC3646T-P-TD-E
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
2SC3646S-P-TD-E 2SC3646T-P-TD-E
Product Status Active Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 40mA, 400mA 400mV @ 40mA, 400mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 100mA, 5V 200 @ 100mA, 5V
Power - Max 500 mW 500 mW
Frequency - Transition 120MHz 120MHz
Operating Temperature - -
Mounting Type Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA
Supplier Device Package PCP PCP