2SC3585-T1B-A vs 2SC3583-T1B-A

Product Attributes

Part Number 2SC3585-T1B-A 2SC3583-T1B-A
Manufacturer Renesas Electronics America Inc Renesas Electronics America Inc
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
2SC3585-T1B-A 2SC3583-T1B-A
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 10V 10V
Frequency - Transition 10GHz 9GHz
Noise Figure (dB Typ @ f) 1.8dB @ 2GHz 1.2dB @ 1GHz
Gain 9dB 13dB
Power - Max 200mW 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 6V 50 @ 20mA, 8V
Current - Collector (Ic) (Max) 35mA 65mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT23-3 (TO-236) SOT23-3 (TO-236)