2SB815-6-TB-E vs 2SB815-7-TB-E

Product Attributes

Part Number 2SB815-6-TB-E 2SB815-7-TB-E
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
2SB815-6-TB-E 2SB815-7-TB-E
Product Status Obsolete Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 700 mA 700 mA
Voltage - Collector Emitter Breakdown (Max) 15 V 15 V
Vce Saturation (Max) @ Ib, Ic 80mV @ 10mA, 100mA 80mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 50mA, 2V 300 @ 50mA, 2V
Power - Max 200 mW 200 mW
Frequency - Transition 250MHz 250MHz
Operating Temperature 125°C (TJ) 125°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package 3-CP 3-CP