2SB815-6-TB-E vs 2SB815-6-TB-EX

Product Attributes

Part Number 2SB815-6-TB-E 2SB815-6-TB-EX
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
2SB815-6-TB-E 2SB815-6-TB-EX
Product Status Obsolete Active
Transistor Type PNP -
Current - Collector (Ic) (Max) 700 mA -
Voltage - Collector Emitter Breakdown (Max) 15 V -
Vce Saturation (Max) @ Ib, Ic 80mV @ 10mA, 100mA -
Current - Collector Cutoff (Max) 100nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 50mA, 2V -
Power - Max 200 mW -
Frequency - Transition 250MHz -
Operating Temperature 125°C (TJ) -
Mounting Type Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package 3-CP -