2SB1302S-TD-E vs 2SB1302T-TD-E

Product Attributes

Part Number 2SB1302S-TD-E 2SB1302T-TD-E
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
2SB1302S-TD-E 2SB1302T-TD-E
Product Status Obsolete Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 5 A 5 A
Voltage - Collector Emitter Breakdown (Max) 20 V 20 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 60mA, 3A 500mV @ 60mA, 3A
Current - Collector Cutoff (Max) 500nA (ICBO) 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA, 2V 100 @ 500mA, 2V
Power - Max 1.3 W 1.3 W
Frequency - Transition 320MHz 320MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA
Supplier Device Package PCP PCP