2SB1215T-H vs 2SB1215T-E

Product Attributes

Part Number 2SB1215T-H 2SB1215T-E
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
2SB1215T-H 2SB1215T-E
Product Status Not For New Designs Obsolete
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 3 A 3 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 150mA, 1.5A 500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max) 1µA (ICBO) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA, 5V 200 @ 500mA, 5V
Power - Max 1 W 1 W
Frequency - Transition 130MHz 130MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package TP TP