2SB1205T-E vs 2SB1201T-E

Product Attributes

Part Number 2SB1205T-E 2SB1201T-E
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
2SB1205T-E 2SB1201T-E
Product Status Obsolete Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 5 A 2 A
Voltage - Collector Emitter Breakdown (Max) 20 V 50 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 60mA, 3A 700mV @ 50mA, 1A
Current - Collector Cutoff (Max) 500nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA, 2V 200 @ 100mA, 2V
Power - Max 1 W 800 mW
Frequency - Transition 320MHz 150MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package TP TP